2004. 3. 22 1/3 semiconductor technical data kta1700 epitaxial planar pnp transistor revision no : 4 high voltage application. features high transition frequency : f t =100mhz(typ.). complementary to ktc2800. maximum rating (ta=25 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.50 0.5 + _ + _ + _ electrical characteristics (ta=25 ) note : h fe classification o:70~140, y:120~240 characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -5 v collector current i c -1.5 a base current i b -0.3 a collector power dissipation ta=25 p c 1.5 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -160 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5.0 - - v dc current gain h fe (note) v ce =-5v, i c =-100ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.5 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-100ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 30 - pf
2004. 3. 22 2/3 kta1700 revision no : 4 pc - ta ambient temperature ta ( c) 0 20 40 c 0 collector power dissipaztion p (w) 20 f - i tc c collector current i (ma) -5 300 t 0 transition frequency f (mhz) 30 -10 -30 -100 -300 -1k 50 100 common emitter v =-10v tc=25 c ce 60 80 100 120 140 160 180 5 10 25 15 30 tc=ta no heat sink 1 2 1 2 infinite heat sink i - v cce ce collector-emitter voltage v (v) 0-2-4-6 -0.2 c 0 collector current i (a) v - i ce(sat) c c collector current i (a) -1 -3 -0.003 -1 ce(sat) collector-emitter saturation 10 dc current gain h fe 300 -0.003 -3 -1 collector current i (a) c c fe h - i -0.2 collector current i (a) 0 c -0.2 0 base-emitter voltage v (v) be be c i - v -8 -10 -12 -14 -16 -0.4 -0.6 -0.8 -1.0 common emitter tc=25 c i =-2ma b -4ma -6ma -8ma -12ma -20ma 0ma -0.01 -0.03 -0.1 -0.3 30 50 100 common emitter v =-5v ce tc=100 c tc=25 c tc=-25 c voltage v (v) -0.01 -0.03 -0.1 -0.3 -0.03 -0.05 -0.1 -0.3 -0.5 common emitter i / i =10 c b tc=100 c tc=25 c tc=-25 c -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.4 -0.6 -0.8 -1.0 common v =-5v ce emitter tc= 100 c tc=25 c tc =-25 c
2004. 3. 22 3/3 kta1700 revision no : 4 collector current i (a) -3 c -0.02 -30 -10 -5 collector-emitter voltage v (v) ce safe operating area -50 -100 -300 -0.05 -0.1 -0.3 -0.5 -1 -5 single nonre- petitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c c i max (continuous) dc s/b limited 1ms 10ms 100ms -1.5
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